2SK4207(Q)详情
Toshiba 2SK4207(Q)重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
引脚数
3 +Tab
Continuous Drain Current
13(A)
Drain-Source On-Volt
900(V)
Operating Temperature Classification
Military
Package Type
TO-3PN
Operating Temp Range
-55C to 150C
Gate-Source Voltage (Max)
±30(V)
Channel Mode
Enhancement
Number of Elements
1
Rad Hardened
无
Mounting
通孔
Operating Temperature-Max
150 °C
Rohs Code
有
Manufacturer Part Number
2SK4207(Q)
Manufacturer
东芝美国电子元器件
Part Life Cycle Code
活跃
Ihs Manufacturer
TOSHIBA CORP
Risk Rank
5.71
ECCN 代码
EAR99
类型
功率MOSFET
子类别
FET 通用电源
极性
N
配置
Single
操作模式
增强型MOSFET
功率耗散
150(W)
极性/通道类型
N-CHANNEL
最大漏极电流 (Abs) (ID)
13 A
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
150 W
达到SVHC
unknown
2SK4207(Q)拓展信息
Toshiba Semiconductor and Storage
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba Semiconductor and Storage
Toshiba
Toshiba
Toshiba
Toshiba








哦! 它是空的。