2SK879-GR(TE85R,F)详情
Toshiba 2SK879-GR(TE85R,F)重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
材料
Si
ECCN (US)
EAR99
Maximum Drain Gate Voltage (V)
-50
Maximum Continuous Drain Current (mA)
6.5
Maximum Power Dissipation (mW)
100
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
125
AEC Qualified
无
Supplier Package
USM
Military
无
Mounting
表面贴装
Package Height
0.9
Package Length
2
Package Width
1.25
PCB changed
3
包装
卷带
零件状态
活跃
引脚数量
3
配置
Single
信道型
N
RoHS状态
符合RoHS标准
2SK879-GR(TE85R,F)拓展信息
Toshiba Semiconductor and Storage
Toshiba
Toshiba
Toshiba
Toshiba Semiconductor and Storage
Toshiba
Toshiba Semiconductor and Storage
Toshiba
Toshiba
Toshiba Semiconductor and Storage









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