Toshiba DF2B6.8M1ACT(TPL3)

工厂交货时间

12 Weeks

包装/外壳

CST-2

表面安装

YES

Cd - Diode Capacitance

0.5 pF

Breakdown Voltage / V

6 V

Maximum Operating Temperature

+ 150 C

Vesd - Voltage ESD Contact

12 kV

Factory Pack QuantityFactory Pack Quantity

10000

Ipp - Peak Pulse Current

2.5 A

Pppm - Peak Pulse Power Dissipation

150 W

Manufacturer

Toshiba

Brand

Toshiba

RoHS

Details

Vesd - Voltage ESD Air Gap

15 kV

Manufacturer Part Number

DF2B6.8M1ACT(TPL3)

Part Life Cycle Code

活跃

Ihs Manufacturer

TOSHIBA CORP

Breakdown Voltage-Nom

6 V

Risk Rank

5.8

系列

DF2B6

包装

Reel

子类别

TVS Diodes / ESD Suppression Diodes

Reach合规守则

unknown

终端样式

SMD/SMT

工作电压

5 V

极性

双向

通道数量

1 Channel

二极管类型

跨压抑制二极管

箝位电压

20 V

产品类别

ESD抑制器

Rep Pk反向电压-最大值

5 V

最大箝位电压

12 V

产品类别

ESD Suppressors / TVS Diodes