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价格梯度
内地含税价
1
¥2.118023
10
¥1.998135
100
¥1.885032
500
¥1.778333
1000
¥1.677673
SSM3J16CT,L3F详情
Toshiba SSM3J16CT,L3F重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
CST3-3
Vds - Drain-Source Breakdown Voltage
20 V
Typical Turn-On Delay Time
130 ns
Vgs th - Gate-Source Threshold Voltage
600 mV
Pd - Power Dissipation
100 mW
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 10 V, + 20 V
Unit Weight
0.000026 oz
Minimum Operating Temperature
-
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Toshiba
Brand
Toshiba
Qg - Gate Charge
-
Rds On - Drain-Source Resistance
8 Ohms
RoHS
Details
Typical Turn-Off Delay Time
190 ns
Id - Continuous Drain Current
100 mA
系列
SSM3J16
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
产品类别
MOSFET
晶体管类型
1 P-Channel
产品类别
MOSFET
SSM3J16CT,L3F拓展信息
Toshiba Semiconductor and Storage
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba Semiconductor and Storage
Toshiba
Toshiba
Toshiba
Toshiba







哦! 它是空的。