Toshiba SSM3K329R,LF(T

安装类型

表面贴装

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±12

Maximum Gate Threshold Voltage (V)

1

Maximum Continuous Drain Current (A)

3.5

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

126@4V

Typical Gate Charge @ Vgs (nC)

1.5@4V

Typical Input Capacitance @ Vds (pF)

123@15V

Maximum Power Dissipation (mW)

2000

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Width

1.8

Package Length

2.9

PCB changed

3

Supplier Package

SOT-23F

Lead Shape

Flat

Continuous Drain Current

3.5(A)

Drain-Source On-Volt

30(V)

Operating Temperature Classification

Military

Package Type

SOT-23F

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±12(V)

Number of Elements

1

Rad Hardened

无

RoHS

Non-Compliant

包装

卷带

零件状态

活跃

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

2(W)

信道型

N