TD62004P详情
Toshiba TD62004P重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Automotive
无
PPAP
无
Number of Elements per Chip
7
Maximum Collector-Emitter Voltage (V)
35
Process Technology
Bipolar
Maximum Continuous DC Collector Current (A)
0.5
Maximum Collector-Emitter Saturation Voltage (V)
1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA
Minimum DC Current Gain
1000@350mA@2V
Maximum Power Dissipation (mW)
1000
Minimum Operating Temperature (°C)
-30
Maximum Operating Temperature (°C)
75
Mounting
通孔
Package Height
3.5
Package Width
6.4
Package Length
19.75(Max)
PCB changed
16
Standard Package Name
DIP
Supplier Package
PDIP
Lead Shape
通孔
零件状态
Obsolete
类型
NPN
引脚数量
16
配置
Array 7
TD62004P拓展信息
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage








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