Toshiba TK20A25D,S5X(J)

安装类型

通孔

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

250

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

20

Maximum Drain Source Resistance (mOhm)

100@10V

Typical Gate Charge @ Vgs (nC)

55@10V

Typical Gate Charge @ 10V (nC)

55

Typical Input Capacitance @ Vds (pF)

2550@100V

Maximum Power Dissipation (mW)

45000

Typical Fall Time (ns)

35

Typical Rise Time (ns)

30

Typical Turn-Off Delay Time (ns)

270

Typical Turn-On Delay Time (ns)

60

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

15

Package Width

4.5

Package Length

10

PCB changed

3

Tab

Tab

Supplier Package

TO-220SIS

Package Type

TO-220SIS

Maximum Operating Temperature

+150 °C

包装

Tube

零件状态

活跃

引脚数量

3

配置

Single

信道型

N

宽度

4.5mm

高度

15mm

长度

10mm