Toshiba TK20J50D(F)

安装类型

通孔

包装/外壳

SC-65-3

Continuous Drain Current Id

20

Number of Elements per Chip

1

Package Type

TO-3PN

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

500 V

Typical Turn-On Delay Time

100 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

280 W

Transistor Polarity

N-Channel

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.059966 oz

Factory Pack QuantityFactory Pack Quantity

100

Mounting Styles

通孔

Manufacturer

Toshiba

Brand

Toshiba

Qg - Gate Charge

45 nC

Rds On - Drain-Source Resistance

270 mOhms

RoHS

Details

Typical Turn-Off Delay Time

150 ns

Id - Continuous Drain Current

20 A

系列

TK

包装

Tube

子类别

MOSFETs

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

280

上升时间

50 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

产品类别

MOSFET

宽度

4.8mm

高度

19mm

长度

40.5mm