Toshiba TK70J20D,S1Q

包装/外壳

TO-3PN-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

200 V

Id - Continuous Drain Current

70 A

Rds On - Drain-Source Resistance

27 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Qg - Gate Charge

160 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

410 W

Channel Mode

Enhancement

Tradename

MOSVII

Fall Time

745 ns

Factory Pack QuantityFactory Pack Quantity

25

Typical Turn-Off Delay Time

105 ns

Typical Turn-On Delay Time

155 ns

Unit Weight

0.162260 oz

配置

Single

通道数量

1 Channel

上升时间

230 ns

晶体管类型

1 N-Channel