Toshiba TPCA8128,L1Q(CM

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

U-MOS VI

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

20

Maximum Continuous Drain Current (A)

34

Maximum Drain Source Resistance (MOhm)

4.8@10V

Typical Gate Charge @ Vgs (nC)

115@10V

Typical Gate Charge @ 10V (nC)

115

Typical Input Capacitance @ Vds (pF)

4800@10V

Maximum Power Dissipation (mW)

2800

Typical Fall Time (ns)

135

Typical Rise Time (ns)

11

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.95

Package Width

5

Package Length

5

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOP预付款

包装

卷带

零件状态

活跃

引脚数量

8

配置

单四漏三源

信道型

P