Toshiba America Electronic Components 2SD1429
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2SD1429
2541-2SD1429
晶体管 - 双极性晶体管(BJT)- 单个
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大陆
立即发货

TRANSISTOR 2.5 A, 600 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
1最小包装量--
2SD1429详情
Toshiba America Electronic Components 2SD1429重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
TOSHIBA CORP
Package Description
FLANGE MOUNT, R-PSFM-T3
Number of Elements
1
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Transition Frequency-Nom (fT)
3 MHz
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
锡铅
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSFM-T3
资历状况
不合格
配置
SINGLE
箱体转运
COLLECTOR
晶体管应用
AMPLIFIER
极性/通道类型
NPN
集电极电流-最大值(IC)
2.5 A
最小直流增益(hFE)
8
集电极-发射器电压-最大值
600 V
2SD1429拓展信息
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage







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