Toshiba America Electronic Components RN1112FT
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RN1112FT
2541-RN1112FT
晶体管 - 双极性晶体管(BJT)- 单个
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Description: TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP General Purpose Small Signal
1最小包装量--
RN1112FT详情
Toshiba America Electronic Components RN1112FT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
引脚数
3
终端数量
3
晶体管元件材料
SILICON
Operating Temperature-Max
150 °C
Part Life Cycle Code
Obsolete
Ihs Manufacturer
TOSHIBA CORP
Package Description
THIN, TESM, 2-1B1A, 3 PIN
Number of Elements
1
Package Shape
RECTANGULAR
Package Style
小概要
Transition Frequency-Nom (fT)
250 MHz
Package Body Material
PLASTIC/EPOXY
附加功能
BUILT-IN BIAS RESISTOR
端子位置
DUAL
终端形式
FLAT
Reach合规守则
unknown
JESD-30代码
R-PDSO-F3
资历状况
不合格
配置
SINGLE WITH BUILT-IN RESISTOR
晶体管应用
SWITCHING
极性/通道类型
NPN
集电极电流-最大值(IC)
0.1 A
最小直流增益(hFE)
120
集电极-发射器电压-最大值
50 V
RN1112FT拓展信息
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage







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