Toshiba America Electronic Components RN1201
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RN1201
2541-RN1201
晶体管 - 双极性晶体管(BJT)- 单个
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TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MINI, 2-4E1A, 3 PIN, BIP General Purpose Small Signal
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RN1201详情
Toshiba America Electronic Components RN1201重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
Contact plating
gold-plated
Number of pins
60
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Part Life Cycle Code
Obsolete
Ihs Manufacturer
TOSHIBA CORP
Package Description
IN-LINE, R-PSIP-T3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Transition Frequency-Nom (fT)
250 MHz
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
THT
Connector pinout layout
2x30
Row pitch
2.54mm
Gross weight
3.6 g
Operating temperature
-40...163°C
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
锡铅
附加功能
BUILT-IN BIAS RESISTOR RATIO IS 1
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
Current rating
1.5A
引脚数量
3
JESD-30代码
R-PSIP-T3
资历状况
不合格
配置
SINGLE WITH BUILT-IN RESISTOR
晶体管应用
SWITCHING
极性/通道类型
NPN
最大耗散功率(Abs)
0.3 W
集电极电流-最大值(IC)
0.1 A
最小直流增益(hFE)
30
Rated voltage
60V
集电极-发射器电压-最大值
50 V
VCEsat-最大值
0.3 V
集电极-基极电容-最大值
6 pF
个人资料
beryllium copper
Plating thickness
0.75µm
Flammability rating
UL94V-0
RN1201拓展信息
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage







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