Toshiba America Electronic Components RN1903,LF(CB
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RN1903,LF(CB
2541-RN1903,LF(CB
晶体管 - 双极性晶体管(BJT)- 单个
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Description: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
1最小包装量--
RN1903,LF(CB详情
Toshiba America Electronic Components RN1903,LF(CB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
6
晶体管元件材料
SILICON
Part Life Cycle Code
活跃
Ihs Manufacturer
TOSHIBA CORP
Number of Elements
2
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Transition Frequency-Nom (fT)
250 MHz
ECCN 代码
EAR99
附加功能
BUILT-IN BIAS RESISTOR IS 1
HTS代码
8541.21.00.75
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
unknown
时间@峰值回流温度-最大值(s)
未说明
JESD-30代码
R-PDSO-G6
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
晶体管应用
SWITCHING
极性/通道类型
NPN
最大耗散功率(Abs)
0.2 W
集电极电流-最大值(IC)
0.1 A
最小直流增益(hFE)
70
集电极-发射器电压-最大值
50 V
VCEsat-最大值
0.3 V
集电极-基极电容-最大值
6 pF
环境耗散-最大值
0.2 W
RN1903,LF(CB拓展信息
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage







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