Toshiba America Electronic Components RN2227
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RN2227
2541-RN2227
晶体管 - 双极性晶体管(BJT)- 单个
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Description: TRANSISTOR 800 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purpose Small Signal
1最小包装量--
RN2227详情
Toshiba America Electronic Components RN2227重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
引脚数
3
终端数量
3
晶体管元件材料
SILICON
Package Style
IN-LINE
Package Shape
RECTANGULAR
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
150 °C
Number of Elements
1
Package Description
IN-LINE, R-PSIP-T3
Ihs Manufacturer
TOSHIBA CORP
Part Life Cycle Code
Obsolete
Transition Frequency-Nom (fT)
200 MHz
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
锡铅
附加功能
BUILT-IN BIAS RESISTOR RATIO IS 4.5
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSIP-T3
资历状况
不合格
配置
SINGLE WITH BUILT-IN RESISTOR
晶体管应用
SWITCHING
极性/通道类型
PNP
最大耗散功率(Abs)
0.3 W
集电极电流-最大值(IC)
0.8 A
最小直流增益(hFE)
90
集电极-发射器电压-最大值
50 V
RN2227拓展信息
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage







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