Toshiba Semiconductor and Storage SSM3J15CT,L3F

包装/外壳

SC-101, SOT-883

安装类型

表面贴装

供应商器件包装

CST3

Power Dissipation (Max)

100mW (Ta)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.7V @ 100μA

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4V

Current - Continuous Drain (Id) @ 25℃

100mA (Ta)

Product Status

活跃

Package

Tape & Reel (TR)

厂商

东芝半导体与存储

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

175 ns

Vgs th - Gate-Source Threshold Voltage

1.7 V

Pd - Power Dissipation

100 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Factory Pack QuantityFactory Pack Quantity

10000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Toshiba

Brand

Toshiba

Qg - Gate Charge

3.6 nC

Rds On - Drain-Source Resistance

12 Ohms

RoHS

Details

Typical Turn-Off Delay Time

65 ns

Id - Continuous Drain Current

100 mA

操作温度

150°C

系列

-

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

12Ohm @ 10mA, 4V

输入电容(Ciss)(Max)@Vds

9.1 pF @ 3 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET