Toshiba Semiconductor and Storage SSM5N16FU,LF

安装类型

表面贴装

包装/外壳

5-TSSOP, SC-70-5, SOT-353

供应商器件包装

USV

厂商

东芝半导体与存储

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

100mA (Ta)

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

70 ns

Vgs th - Gate-Source Threshold Voltage

600 mV

Pd - Power Dissipation

200 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 10 V, + 10 V

Unit Weight

0.000212 oz

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

40 mS

Channel Mode

Enhancement

Manufacturer

Toshiba

Brand

Toshiba

Tradename

MOSVI

Rds On - Drain-Source Resistance

3 Ohms

RoHS

Details

Typical Turn-Off Delay Time

125 ns

Id - Continuous Drain Current

100 mA

系列

-

操作温度

150°C

包装

切割胶带

子类别

MOSFETs

技术

Si

配置

Dual

通道数量

2 Channel

功率 - 最大

200mW (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

3Ohm @ 10mA, 4V

不同 Id 时 Vgs(th)（最大值）

1.1V @ 100μA

输入电容(Ciss)(Max)@Vds

9.3pF @ 3V

门极电荷(Qg)(最大)@Vgs

-

漏源电压 (Vdss)

20V

产品类别

MOSFET

场效应管特性

Standard

产品类别

MOSFET