Toshiba Semiconductor and Storage TK10E80W,S1X

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220

厂商

东芝半导体与存储

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 450μA

Power Dissipation (Max)

130W (Tc)

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

65 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

130 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Toshiba

Brand

Toshiba

Qg - Gate Charge

19 nC

Tradename

DTMOSVI

Rds On - Drain-Source Resistance

550 mOhms

RoHS

Details

Typical Turn-Off Delay Time

120 ns

Id - Continuous Drain Current

9.5 A

系列

DTMOSIV

操作温度

150°C

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

550mOhm @ 4.8A, 10V

输入电容(Ciss)(Max)@Vds

1150 pF @ 300 V

门极电荷(Qg)(最大)@Vgs

19 nC @ 10 V

上升时间

35 ns

漏源电压 (Vdss)

800 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET