Toshiba Semiconductor and Storage TK12A50W,S5X

包装/外壳

TO-220-3 Full Pack

安装类型

通孔

供应商器件包装

TO-220SIS

Power Dissipation (Max)

35W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.7V @ 600μA

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

11.5A (Ta)

Product Status

活跃

Package

Tube

厂商

东芝半导体与存储

Vds - Drain-Source Breakdown Voltage

500 V

Typical Turn-On Delay Time

45 ns

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

35 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Toshiba

Brand

Toshiba

Qg - Gate Charge

25 nC

Tradename

DTMOSIV

Rds On - Drain-Source Resistance

300 mOhms

RoHS

Details

Typical Turn-Off Delay Time

85 ns

Id - Continuous Drain Current

11.5 A

操作温度

150°C

系列

DTMOSIV

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

300mOhm @ 5.8A, 10V

输入电容(Ciss)(Max)@Vds

890 pF @ 300 V

门极电荷(Qg)(最大)@Vgs

25 nC @ 10 V

上升时间

23 ns

漏源电压 (Vdss)

500 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET