Toshiba Semiconductor and Storage TK5A60W5,S5VX

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

供应商器件包装

TO-220SIS

厂商

东芝半导体与存储

Current - Continuous Drain (Id) @ 25℃

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 230μA

Power Dissipation (Max)

30W (Tc)

系列

DTMOSIV

包装

Tube

操作温度

150°C

零件状态

活跃

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

950mOhm @ 2.3A, 10V

输入电容(Ciss)(Max)@Vds

370 pF @ 300 V

门极电荷(Qg)(最大)@Vgs

11.5 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V