Toshiba Semiconductor and Storage TK5A80E,S4X

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

供应商器件包装

TO-220SIS

厂商

东芝半导体与存储

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

40W (Tc)

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

55 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

40 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Toshiba

Brand

Toshiba

Qg - Gate Charge

20 nC

Tradename

MOSVII

Rds On - Drain-Source Resistance

2.4 Ohms

RoHS

Details

Typical Turn-Off Delay Time

80 ns

Id - Continuous Drain Current

5 A

系列

-

操作温度

150°C

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.4Ohm @ 2.5A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 500μA

输入电容(Ciss)(Max)@Vds

950 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

20 nC @ 10 V

上升时间

25 ns

漏源电压 (Vdss)

800 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET