Toshiba Semiconductor and Storage TK8R2E06PL,S1X

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 300μA

厂商

东芝半导体与存储

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

50A (Tc)

Power Dissipation (Max)

81W (Tc)

Id - Continuous Drain Current

75 A

Typical Turn-Off Delay Time

42 ns

RoHS

Details

Rds On - Drain-Source Resistance

8.2 mOhms

Tradename

U-MOSIX-H

Qg - Gate Charge

28 nC

Brand

Toshiba

Manufacturer

Toshiba

Channel Mode

Enhancement

Mounting Styles

通孔

Factory Pack QuantityFactory Pack Quantity

50

Minimum Operating Temperature

- 55 C

Unit Weight

0.068784 oz

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 175 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

81 W

Vgs th - Gate-Source Threshold Voltage

1.5 V

Typical Turn-On Delay Time

19 ns

Vds - Drain-Source Breakdown Voltage

60 V

系列

U-MOSIX-H

操作温度

175°C

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.2mOhm @ 25A, 10V

输入电容(Ciss)(Max)@Vds

1990 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

28 nC @ 10 V

上升时间

5 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET