TT Electronics 2N2369A

包装/外壳

TO-18-3

Emitter- Base Voltage VEBO

4.5 V

Pd - Power Dissipation

360 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

40 at 10 mA, 1 V

Collector-Emitter Saturation Voltage

500 mV

Minimum Operating Temperature

- 65 C

Mounting Styles

通孔

Gain Bandwidth Product fT

500 MHz

Maximum DC Collector Current

500 mA

Collector- Emitter Voltage VCEO Max

15 V

技术

Si

配置

Single

集电极基极电压(VCBO)

40 V