TT Electronics 2N4906

包装/外壳

TO-3-2

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

87 W

Transistor Polarity

PNP

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

25 at - 2.5 A, - 2 V

Collector-Emitter Saturation Voltage

1.5 V

Minimum Operating Temperature

- 65 C

Mounting Styles

通孔

Gain Bandwidth Product fT

4 MHz

Maximum DC Collector Current

5 A

Collector- Emitter Voltage VCEO Max

80 V

技术

Si

配置

Single

集电极基极电压(VCBO)

80 V