TT Electronics 2N4209C1A

包装/外壳

LCC1-3

Emitter- Base Voltage VEBO

4.5 V

Pd - Power Dissipation

360 mW

Transistor Polarity

PNP

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

50 at - 10 mA, - 0.3 V

Collector-Emitter Saturation Voltage

600 mV

Minimum Operating Temperature

- 65 C

Mounting Styles

SMD/SMT

Collector- Emitter Voltage VCEO Max

15 V

技术

Si

配置

Single

集电极基极电压(VCBO)

15 V