TT Electronics BDS19-QR-B

包装/外壳

TO220M-3

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

50 W

Transistor Polarity

PNP

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

15 at - 4 A, - 2 V

Collector-Emitter Saturation Voltage

1.5 V

Minimum Operating Temperature

- 65 C

Mounting Styles

通孔

Gain Bandwidth Product fT

10 MHz

Collector- Emitter Voltage VCEO Max

150 V

技术

Si

配置

Single

集电极基极电压(VCBO)

150 V