VBsemi Elec ACE2302BM H-VB
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ACE2302BM H-VB
2638-ACE2302BM H-VB
晶体管 - FET,MOSFET - 单个
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20V 6A 2.1W 28mΩ@4.5V,5A 1V@250uA 1 N-channel SOT-23 MOSFETs ROHS
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ACE2302BM H-VB详情
VBsemi Elec ACE2302BM H-VB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
20V
Power Dissipation (Pd)
2.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)
28mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)@Id)
1V@250uA
Reverse Transfer Capacitance (Crss@Vds)
55pF@10V
Input Capacitance (Ciss@Vds)
865pF@10V
Total Gate Charge (Qg@Vgs)
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-channel
Continuous Drain Current (Id)
6A
ACE2302BM H-VB拓展信息
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哦! 它是空的。