VBsemi Elec EMB50P03J-VB
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EMB50P03J-VB
2638-EMB50P03J-VB
晶体管 - FET,MOSFET - 单个
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30V 5.6A 2.5W 46mΩ@10V,4.4A 2V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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EMB50P03J-VB详情
VBsemi Elec EMB50P03J-VB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
30V
Power Dissipation (Pd)
2.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)
46mΩ@10V,4.4A
Gate Threshold Voltage (Vgs(th)@Id)
2V@250uA
Reverse Transfer Capacitance (Crss@Vds)
130pF@15V
Input Capacitance (Ciss@Vds)
1.295nF@15V
Total Gate Charge (Qg@Vgs)
24nC@10V
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 Piece P-Channel
Continuous Drain Current (Id)
5.6A
EMB50P03J-VB拓展信息
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