VBsemi Elec FDD8424H-VB
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FDD8424H-VB
2638-FDD8424H-VB
晶体管 - FET,MOSFET - 单个
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大陆
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40V 50A 108W 0.014Ω@10V,38A 1V@250uA 1 N-Channel 1 P-Channel TO-252-4L MOSFETs ROHS
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FDD8424H-VB详情
VBsemi Elec FDD8424H-VB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
40V
Power Dissipation (Pd)
108W
Drain Source On Resistance (RDS(on)@Vgs,Id)
0.014Ω@10V,38A
Gate Threshold Voltage (Vgs(th)@Id)
1V@250uA
Reverse Transfer Capacitance (Crss@Vds)
136pF
Input Capacitance (Ciss@Vds)
2248pF@20V
Total Gate Charge (Qg@Vgs)
310nC@10V
Package
Tape & Reel (TR)
操作温度
-55℃~+175℃
类型
1 N-Channel + 1 P-Channel
Continuous Drain Current (Id)
50A
FDD8424H-VB拓展信息
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