VBsemi Elec IPD350N06LG-VB
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IPD350N06LG-VB
2638-IPD350N06LG-VB
晶体管 - FET,MOSFET - 单个
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60V 45A 25mΩ@10V,15A 100W 2V@250uA 1 N-channel MOSFETs ROHS
1最小包装量--
IPD350N06LG-VB详情
VBsemi Elec IPD350N06LG-VB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
60V
Drain Source On Resistance (RDS(on)@Vgs,Id)
25mΩ@10V,15A
Power Dissipation (Pd)
100W
Gate Threshold Voltage (Vgs(th)@Id)
2V@250uA
Reverse Transfer Capacitance (Crss@Vds)
60pF@25V
Input Capacitance (Ciss@Vds)
1.5nF@25V
Total Gate Charge (Qg@Vgs)
11nC@10V
Package
Tape & Reel (TR)
操作温度
-55℃~+175℃@(Tj)
类型
1 N-channel
Continuous Drain Current (Id)
45A
IPD350N06LG-VB拓展信息
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