VBsemi Elec MMBF170LT1G-VB
- 收藏
- 对比
MMBF170LT1G-VB
2638-MMBF170LT1G-VB
晶体管 - FET,MOSFET - 单个
--
大陆
立即发货

60V 250mA 2.8Ω@10V,200mA 300mW 2.5V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
1最小包装量--
MMBF170LT1G-VB详情
VBsemi Elec MMBF170LT1G-VB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
60V
Drain Source On Resistance (RDS(on)@Vgs,Id)
2.8Ω@10V,200mA
Power Dissipation (Pd)
300mW
Gate Threshold Voltage (Vgs(th)@Id)
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)
2pF@25V
Input Capacitance (Ciss@Vds)
25pF@25V
Total Gate Charge (Qg@Vgs)
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
250mA
MMBF170LT1G-VB拓展信息
VBsemi Elec
VBsemi Elec
VBsemi Elec
VBsemi Elec
VBsemi Elec
VBsemi Elec
VBsemi Elec
VBsemi Elec
VBsemi Elec
VBsemi Elec







哦! 它是空的。