VBsemi Elec NTD3055L104-VB
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NTD3055L104-VB
2638-NTD3055L104-VB
晶体管 - FET,MOSFET - 单个
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60V 35A 32mΩ@10V,12A 59.5W 3.5V@250uA 1 N-Channel TO-251 MOSFETs ROHS
1最小包装量--
NTD3055L104-VB详情
VBsemi Elec NTD3055L104-VB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
60V
Drain Source On Resistance (RDS(on)@Vgs,Id)
32mΩ@10V,12A
Power Dissipation (Pd)
59.5W
Gate Threshold Voltage (Vgs(th)@Id)
3.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)
130pF@30V
Input Capacitance (Ciss@Vds)
1.1nF@30V
Total Gate Charge (Qg@Vgs)
Package
Tube-packed
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
35A
NTD3055L104-VB拓展信息
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