VBsemi Elec PSMN022-30PL-VB
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PSMN022-30PL-VB
2638-PSMN022-30PL-VB
晶体管 - FET,MOSFET - 单个
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30V 55A 10mΩ@10V,28.8A 120W 2.5V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS
1最小包装量--
PSMN022-30PL-VB详情
VBsemi Elec PSMN022-30PL-VB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
30V
Drain Source On Resistance (RDS(on)@Vgs,Id)
10mΩ@10V,28.8A
Power Dissipation (Pd)
120W
Gate Threshold Voltage (Vgs(th)@Id)
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)
370pF@15V
Input Capacitance (Ciss@Vds)
2.201nF@15V
Total Gate Charge (Qg@Vgs)
Package
Tube-packed
操作温度
-55℃~+175℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
55A
PSMN022-30PL-VB拓展信息
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