VBsemi Elec SI2336DS-T1-GE3-VB

RoHS

true

Drain Source Voltage (Vdss)

30V

Power Dissipation (Pd)

1.1W

Gate Threshold Voltage (Vgs(th)@Id)

1.1V@250uA

Reverse Transfer Capacitance (Crss@Vds)

17pF@15V

Input Capacitance (Ciss@Vds)

335pF@15V

Total Gate Charge (Qg@Vgs)

[email protected]

Package

Tape & Reel (TR)

操作温度

-55℃~+150℃@(Tj)

类型

1 N-channel

Continuous Drain Current (Id)

6.5A