VBsemi Elec SI2369DS-T1-GE3-VB

RoHS

true

Drain Source Voltage (Vdss)

30V

Power Dissipation (Pd)

1.6W

Gate Threshold Voltage (Vgs(th)@Id)

500mV@250uA

Reverse Transfer Capacitance (Crss@Vds)

130pF@15V

Input Capacitance (Ciss@Vds)

1.295nF@15V

Total Gate Charge (Qg@Vgs)

24nC@10V

Package

Tape & Reel (TR)

操作温度

-55℃~+150℃@(Tj)

类型

1 Piece P-Channel

Continuous Drain Current (Id)

5.4A