VBsemi Elec SQM120N10-09-GE3-VB
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SQM120N10-09-GE3-VB
2638-SQM120N10-09-GE3-VB
晶体管 - FET,MOSFET - 单个
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100V 140A 0.004Ω@10V,30A 3.75W 2V@250uA TO-263 MOSFETs ROHS
--最小包装量--
SQM120N10-09-GE3-VB详情
VBsemi Elec SQM120N10-09-GE3-VB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
100V
Drain Source On Resistance (RDS(on)@Vgs,Id)
0.004Ω@10V,30A
Power Dissipation (Pd)
3.75W
Gate Threshold Voltage (Vgs(th)@Id)
2V@250uA
Reverse Transfer Capacitance (Crss@Vds)
280pF@25V
Input Capacitance (Ciss@Vds)
5.5nF@25V
Total Gate Charge (Qg@Vgs)
160nC@10V
Package
Tube-packed
操作温度
-55℃~+175℃
Continuous Drain Current (Id)
140A
SQM120N10-09-GE3-VB拓展信息
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哦! 它是空的。