VBsemi Elec SUD50N04-8M8P-4GE3-VB
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SUD50N04-8M8P-4GE3-VB
2638-SUD50N04-8M8P-4GE3-VB
晶体管 - FET,MOSFET - 单个
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40V 85A 3.13W 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS
1最小包装量--
SUD50N04-8M8P-4GE3-VB详情
VBsemi Elec SUD50N04-8M8P-4GE3-VB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Package
Tape & Reel (TR)
Total Gate Charge (Qg@Vgs)
80nC@10V
Input Capacitance (Ciss@Vds)
2.38nF@20V
Reverse Transfer Capacitance (Crss@Vds)
250pF@20V
Gate Threshold Voltage (Vgs(th)@Id)
2.5V@250uA
Power Dissipation (Pd)
3.13W
Drain Source Voltage (Vdss)
40V
RoHS
true
操作温度
-55℃~+150℃
类型
1 N-channel
Continuous Drain Current (Id)
85A
SUD50N04-8M8P-4GE3-VB拓展信息
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哦! 它是空的。