参数名
参数值
参数名
参数值
包装/外壳
MicroFET-6
Id - Continuous Drain Current
3.1 A
Typical Turn-Off Delay Time
37 ns
RoHS
Details
Rds On - Drain-Source Resistance
60 mOhms
Qg - Gate Charge
10 nC
Brand
onsemi / Fairchild
Manufacturer
onsemi
Part # Aliases
FDFMA2P029Z_F106
Channel Mode
Enhancement
Forward Transconductance - Min
- 11 S
Mounting Styles
SMD/SMT
Factory Pack QuantityFactory Pack Quantity
3000
Minimum Operating Temperature
- 55 C
Unit Weight
0.001411 oz
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Maximum Operating Temperature
+ 150 C
Transistor Polarity
P-Channel
Pd - Power Dissipation
1.4 W
Vgs th - Gate-Source Threshold Voltage
1.5 V
Typical Turn-On Delay Time
13 ns
Vds - Drain-Source Breakdown Voltage
20 V
包装
Reel
系列
FDFMA2P029Z
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
11 ns
产品类别
MOSFET
晶体管类型
1 P-Channel
产品类别
MOSFET