BYG21M-E3/TR3详情
VISHAY BYG21M-E3/TR3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Case1
SMA
Features of semiconductor devices
avalanche breakdown effect
Features of semiconductor devices1
glass passivated
Semiconductor structure
single diode
Max. off-state voltage
1kV
Mounting
SMD
Type of diode
rectifying
Case
DO214AC
Max. forward voltage
1.6V
Max. forward impulse current
30A
Kind of package1
tape
Kind of package
reel
Gross weight
0.1g
Certificates
RoHS compliant
Leakage current
10µA
Reverse recovery time
120ns
Load current
1.5A
BYG21M-E3/TR3拓展信息
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哦! 它是空的。