参数名
参数值
参数名
参数值
包装/外壳
Power-56-8
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-On Delay Time
6.6 ns
Vgs th - Gate-Source Threshold Voltage
2.2 V
Pd - Power Dissipation
2.5 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.008818 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Forward Transconductance - Min
53 S
Part # Aliases
FDMS7620S_F106
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
15.6 nC
Rds On - Drain-Source Resistance
20 mOhms
RoHS
Details
Typical Turn-Off Delay Time
17.4 ns
Id - Continuous Drain Current
12.4 A
系列
FDMS7620S
包装
Reel
子类别
MOSFETs
技术
Si
配置
Dual
通道数量
2 Channel
上升时间
1.8 ns
产品类别
MOSFET
晶体管类型
2 N-Channel
产品类别
MOSFET
宽度
5 mm
高度
1.1 mm
长度
6 mm