Vishay CL67BK8R2KPG

包装/外壳

TO-262-3

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

216 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.084199 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

FCI25N60N_F102

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

74 nC

Rds On - Drain-Source Resistance

107 mOhms

RoHS

Details

Id - Continuous Drain Current

25 A

系列

FCI25N60N

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

4.83 mm

高度

7.88 mm

长度

10.29 mm