Vishay D55342K07B90D9TULT

包装/外壳

SOT-223-4

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

10 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

2.1 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.003951 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

FQT1N80TF_WS

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

7.2 nC

Rds On - Drain-Source Resistance

20 Ohms

RoHS

Details

Typical Turn-Off Delay Time

15 ns

Id - Continuous Drain Current

200 mA

系列

FQT1N80

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

25 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

3.5 mm

高度

1.8 mm

长度

6.5 mm