GA100TS120UPBF详情
Vishay GA100TS120UPBF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Maximum Collector-Emitter Voltage (V)
1200
Maximum Gate Emitter Voltage (V)
±20
Maximum Power Dissipation (mW)
520000
Maximum Continuous Collector Current (A)
182
Maximum Gate Emitter Leakage Current (uA)
0.25
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Standard Package Name
INT-A-PAK
Supplier Package
INT-A-PAK
Military
无
Mounting
Screw
Package Height
30
Package Length
94
Package Width
35
PCB changed
7
零件状态
Obsolete
引脚数量
7
配置
Dual
信道型
N
RoHS状态
符合RoHS标准
GA100TS120UPBF拓展信息
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division









哦! 它是空的。