GB50YF120N详情
Vishay GB50YF120N重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
Screw
引脚数
35
ECCN (US)
EAR99
Maximum Collector-Emitter Voltage (V)
1200
Maximum Gate Emitter Voltage (V)
±20
Maximum Power Dissipation (mW)
330000
Maximum Continuous Collector Current (A)
66
Maximum Gate Emitter Leakage Current (uA)
0.2
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Supplier Package
ECONO2 4PAK
Military
无
Mounting
Screw
Package Height
17
Package Length
107.8
Package Width
45.4
PCB changed
11
Manufacturer Part Number
VS-GB50YF120N
Manufacturer
Vishay
RoHS
有
Package Description
,
Operating Temperature-Max
125 °C
Rohs Code
无
Number of Elements
2
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Risk Rank
5.91
零件状态
Obsolete
类型
Quad-Pack
最高工作温度
150 °C
最小工作温度
-40 °C
子类别
绝缘栅BIP晶体管
Reach合规守则
unknown
引脚数量
11
配置
Quade
集电极发射器电压(VCEO)
1.2 kV
信道型
N
最大耗散功率(Abs)
330 W
集电极电流-最大值(IC)
66 A
集电极-发射器电压-最大值
1200 V
栅极-发射极电压-最大值
20 V
高度(毫米)
20.5 mm
RoHS状态
符合RoHS标准
GB50YF120N拓展信息
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division









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