Vishay GN00159R00BE1280

包装/外壳

TO-220-3

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

11 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

29 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Forward Transconductance - Min

1 S

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay / Siliconix

Qg - Gate Charge

19.6 nC

Rds On - Drain-Source Resistance

2.75 Ohms

RoHS

Details

Typical Turn-Off Delay Time

19 ns

Id - Continuous Drain Current

2.8 A

系列

E

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

7 ns

产品类别

MOSFET

产品类别

MOSFET