Vishay IRF840HPBF

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220AB

Package

Tube

Current - Continuous Drain (Id) @ 25℃

7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Vishay Siliconix

Power Dissipation (Max)

125W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

500 V

Typical Turn-On Delay Time

15 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

125 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Forward Transconductance - Min

2.8 S

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

39 nC

Rds On - Drain-Source Resistance

850 mOhms

RoHS

Details

Typical Turn-Off Delay Time

23 ns

Id - Continuous Drain Current

7.3 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

包装

Tube

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

850mOhm @ 4.8A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250µA

输入电容(Ciss)(Max)@Vds

1059 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

39 nC @ 10 V

上升时间

30 ns

漏源电压 (Vdss)

500 V

Vgs（最大值）

±30V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET