Vishay IRLL110TRPBF-BE3

包装/外壳

SOT-223-4

安装类型

表面贴装

供应商器件包装

SOT-223

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

9.3 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

3.1 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 10 V, + 10 V

Unit Weight

0.008818 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IRLL110TRPBF

Manufacturer

Vishay

Brand

Vishay / Siliconix

Qg - Gate Charge

6.1 nC

Rds On - Drain-Source Resistance

540 mOhms

RoHS

Details

Typical Turn-Off Delay Time

16 ns

Id - Continuous Drain Current

1.5 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

IRLL110

Current - Continuous Drain (Id) @ 25℃

1.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

厂商

Vishay Siliconix

Power Dissipation (Max)

2W (Ta), 3.1W (Tc)

Product Status

活跃

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

系列

-

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

540mOhm @ 900mA, 5V

不同 Id 时 Vgs(th)（最大值）

2V @ 250µA

输入电容(Ciss)(Max)@Vds

250 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

6.1 nC @ 5 V

上升时间

47 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±10V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET