Vishay MBE04140C3090FR200

包装/外壳

SOT-223-4

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

7.7 ns

Vgs th - Gate-Source Threshold Voltage

1.9 V

Development Kit

-

Pd - Power Dissipation

1.8 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.004004 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

60 mS

Channel Mode

Enhancement

Part # Aliases

SP001058578 BSP125H6433XTMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

4.4 nC

Rds On - Drain-Source Resistance

25 Ohms

RoHS

Details

Typical Turn-Off Delay Time

20 ns

Id - Continuous Drain Current

120 mA

系列

BSP125

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

14.4 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

3.5 mm

高度

1.6 mm

长度

6.5 mm