Vishay P-0603Y4991BBT1

包装/外壳

TSSOP-8

Vds - Drain-Source Breakdown Voltage

12 V

Typical Turn-On Delay Time

45 ns

Vgs th - Gate-Source Threshold Voltage

900 mV

Pd - Power Dissipation

1.14 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

25 S

Channel Mode

Enhancement

Manufacturer

Vishay

Brand

Vishay Semiconductors

Qg - Gate Charge

28 nC

Rds On - Drain-Source Resistance

21 mOhms

RoHS

Details

Typical Turn-Off Delay Time

130 ns

Id - Continuous Drain Current

5.8 A

包装

Bulk

子类别

MOSFETs

技术

Si

通道数量

2 Channel

上升时间

80 ns

产品类别

MOSFET

晶体管类型

2 P-Channel

产品类别

MOSFET