参数名
参数值
参数名
参数值
包装/外壳
DPAK-3
Vds - Drain-Source Breakdown Voltage
600 V
Typical Turn-On Delay Time
35 ns
Vgs th - Gate-Source Threshold Voltage
3 V
Pd - Power Dissipation
83 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
0.011640 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
SMD/SMT
Forward Transconductance - Min
6 S
Channel Mode
Enhancement
Part # Aliases
FCD7N60TM_WS
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
30 nC
Tradename
SuperFET
Rds On - Drain-Source Resistance
530 mOhms
RoHS
Details
Typical Turn-Off Delay Time
75 ns
Id - Continuous Drain Current
7 A
系列
FCD7N60
包装
MouseReel
类型
SuperFET
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
55 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET
宽度
6.22 mm
高度
2.39 mm
长度
6.73 mm